High-power LEDs based on InGaAsP/InP heterostructures

Rakovics, Vilmos and Imenkov, A N and Sherstnev, V V and Serebrennikova, O Yu and Il’inskaya, N D (2014) High-power LEDs based on InGaAsP/InP heterostructures. SEMICONDUCTORS, 48 (12). pp. 1653-1656. ISSN 1063-7826

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Abstract

Hig-hpower ligh-temitting diodes (LEDs) wi th mesa diameters of 100, 200, and 300 μ m are devel oped on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ~45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ~5000 A/cm 2 , which makes these structures promising for the development of highpo-er LEDs. An emission power of ~14 mW is obtained in the continuous-wave mode ( I = 0.2 A, λ = 1.1 μ m), and that of 77 mW, in the pulsed mode ( I = 2 A, λ = 1.1 μ m), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively

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