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Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

Knaup, J. and Deák, P. and Frauenheim, Th. and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study. Physical Review B (Condensed Matter and Materials Physics), 72 (11). No. 115323. ISSN 1098-0121

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Abstract

A systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an alpha-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in both SiC/SiO2 and Si/SiO2 systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicon interstitial and carbon dimers give rise to gap levels in the energy range inferred from experiments. The properties of these defects are discussed in light of the knowledge about the SiC/SiO2 interface.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
T Technology / alkalmazott, műszaki tudományok > T2 Technology (General) / műszaki tudományok általában
Depositing User: Erika Bilicsi
Date Deposited: 11 Apr 2013 10:32
Last Modified: 11 Apr 2013 10:32
URI: http://real.mtak.hu/id/eprint/4757

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