REAL

Characterization of sputtered and annealed niobium oxide films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction

Serényi, Miklós and Lohner, Tivadar and Petrik, Péter and Zolnai, Zsolt and Horváth, Zsolt Endre and Nguyen Quoc, Khánh (2008) Characterization of sputtered and annealed niobium oxide films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction. THIN SOLID FILMS, 516 (22). pp. 8096-8100. ISSN 0040-6090

[img] Text
1144997.pdf
Restricted to Registered users only

Download (117Kb) | Request a copy

Abstract

Niobium oxide films were prepared by radio frequency sputtering using Nb2O5 crystalline powder. The thickness and the complex dielectric functions of the as-prepared films were determined by spectroscopic ellipsometry using the Tauc-Lorentz oscillator model. The as- deposited films were amorphous, their refractive index varies between 2.26 and 2.30 at wavelength of 550 nm and the optical band gap varies between 3.29 and 3.46 eV depending on the sputtering conditions. The composition of the layers was studied using Rutherford backscattering spectrometry with 2 MeV He-4(+) ion beam. The Nb/O ratio was found in the close vicinity of the stoichiometric one. The films contained small amount of argon. Annealing in air (500 degrees C, 24 h) causes crystallization and changes in the refractive index and in the extinction coefficient of the film. The optical properties of the sputtered films were compared with those of layers prepared by plasma enhanced chemical vapor deposition, reactive dc sputtering and low frequency magnetron sputtering in other laboratories.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 05 Jun 2013 09:46
Last Modified: 05 Jun 2013 09:46
URI: http://real.mtak.hu/id/eprint/5480

Actions (login required)

View Item View Item