Mg(2)Si(x)Sn(1-x)heterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Galkin, N. G. and Galkin, K. N. and Dotsenko, S.A. and Chernov, I. M. and Maslov, A. M. and Dózsa, László and Pécz, Béla and Osváth, Zoltán and Cora, Ildikó (2017) Mg(2)Si(x)Sn(1-x)heterostructures on Si(111) substrate for optoelectronics and thermoelectronics. PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 10176. pp. 1-11. ISSN 0277-786X

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Abstract

Thin (50-90 m) non-doped and doped (by Al atoms) Mg2Sn0.6Si0.4 and Mg(2)Sn(0.4)Si(0.6)films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 degrees C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-type wafers with 45 cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg2Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships: hex-Mg2Sn(300)parallel to Si(111), hex-Mg2Sn[001]parallel to Si[-112] and hex-Mg2Sn[030]parallel to Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg2Si were also observed inside hex-Mg2Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with n(o) = 3.59 +/- 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions.

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