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Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range

Agócs, Emil and Nassiopoulou, Androula G. and Milita, Silvia and Petrik, Péter (2013) Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range. THIN SOLID FILMS, 541. pp. 83-86. ISSN 0040-6090

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Abstract

Due to quantum-confinement the band structure of silicon nanocrystals (NCs) is different from that of bulk silicon and strongly depends on the NC size. The samples we investigated have been prepared using chemical vapor deposition and annealing allowing a good control of the parameters in terms of both thickness and NC size, being suitable as model systems. The problem of the analysis is that the critical point features of the dielectric function can only be described with acceptable accuracy when using numerous parameters. The majority of the fit parameters are describing the oscillators of different line-shapes. In this work we show how the number of fit parameters can be reduced by a systematic analysis to find non-sensitive and correlating parameters to fix and couple as much parameters as possible.

Item Type: Article
Additional Information:
Uncontrolled Keywords: optical waveguides; SILICON; nanocrystals; MODELS; Chemical vapor deposition; Systematic analysis; SILICON NANOCRYSTALS; Parameter range; Model dielectric functions; Dielectric functions; Correlating parameters; SI; Nanocrystal; MODEL; MDF; Ellipsometry; DIELECTRIC FUNCTION; Critical point
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 06 Jan 2014 07:51
Last Modified: 09 Jan 2014 15:13
URI: http://real.mtak.hu/id/eprint/8359

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