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Items where Author is "Bosi, M."
Group by: Item Type | No Grouping Jump to: Article Number of items: 4. ArticleZolnai, Zs. and Petrik, P. and Németh, A. and Volk, J. and Bosi, M. (2023) Atomic Structure and Annealing-Induced Reordering of ε-Ga2O3: A Rutherford Backscattering/Channeling and Spectroscopic Ellipsometry Study. APPLIED SURFACE SCIENCE, 636. No.-157869. ISSN 0169-4332 (print); 1873-5584 (online) Cora, Ildikó and Fogarassy, Zsolt and Fornari, R. and Bosi, M. and Rečnik, A. and Pécz, Béla (2020) In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3. Acta Materialia, 183. pp. 216-227. ISSN 1359-6454 Bosi, M. and Attolini, G. and Negri, M. and Ferrari, C. and Buffagni, E. and Pécz, Béla and Riesz, Ferenc (2016) Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition. CRYSTENGCOMM. pp. 1-10. ISSN 1466-8033 Sophia, P. Joice and Attolini, G. and Bosi, M. and Buffagni, E. and Ferrari, C. and Vad, Kálmán and Csik, Attila and Takáts, Viktor and Zolnai, Zsolt (2015) Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4 (3). P53-P56. ISSN 2162-8769 |
