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Items where Author is "Choyke, W."
Group by: Item Type | No Grouping Jump to: Article Number of items: 3. ArticleKnaup, J. and Deák, P. and Frauenheim, Th. and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study. Physical Review B (Condensed Matter and Materials Physics), 72 (11). No. 115323. ISSN 1098-0121 Knaup, Jan and Deák, Peter and Frauenheim, Thomas and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Theoretical study of the mechanism of dry oxidation of 4H-SiC. Physical Review B (Condensed Matter and Materials Physics), 71 (23). No. 235321. ISSN 1098-0121 Gali, Ádám and Heringer, D. and Deák, P. and Hajnal, Zoltán and Frauenheim, Th. and Devaty, R. and Choyke, W. (2002) Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study. Physical Review B (Condensed Matter and Materials Physics), 66 (12). No. 125208. ISSN 1098-0121 |
