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Items where Author is "Dobrik, Gergely"

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Number of items: 20.

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Dobrik, Gergely and Nemes-Incze, Péter and Majerus, Bruno and Süle, Péter and Vancsó, Péter and Piszter, Gábor and Menyhárd, Miklós and Kalas, Benjámin and Petrik, Péter and Tapasztó, Levente (2021) Large-area nanoengineering of graphene corrugations hosting visible-frequency graphene plasmons. NATURE NANOTECHNOLOGY. pp. 1-18. ISSN 1748-3387 (print); 1748-3395 (online) (In Press)

Kun, Péter and Fülöp, Bálint and Dobrik, Gergely and Nemes-Incze, Péter and Lukács, István Endre and Csonka, Szabolcs and Hwang, Chanyong and Tapasztó, Levente (2020) Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography. NPJ 2D MATERIALS AND APPLICATIONS, 4. pp. 1-6. ISSN 2397-7132

Sáfrán, György and Szász, Noémi and Dobrik, Gergely and Kalas, Benjamin and Serényi, Miklós (2020) Smart gas dosage by a peristaltic pump for reactive RF sputtering of composition spread combinatorial hafnium-oxy-nitride layers. VACUUM, 182. ISSN 0042-207X

Szendrő, Márton and Süle, Péter and Dobrik, Gergely and Tapasztó, Levente (2020) Ultra-flat twisted superlattices in 2D heterostructures. npj Computational Materials, 6 (1). ISSN 2057-3960

Vancsó, Péter and Popov, Zakhar I. and Pető, János and Ollár, Tamás and Dobrik, Gergely and Pap, József S. and Hwang, Chanyong and Sorokin, Pavel B. and Tapasztó, Levente (2019) Transition Metal Chalcogenide Single Layers as an Active Platform for Single-Atom Catalysis. ACS ENERGY LETTERS, 4 (8). pp. 1947-1953. ISSN 2380-8195

Koós, Antal Adolf and Vancsó, Péter and Szendrő, Márton and Dobrik, Gergely and Antognini, Silva D. and Biró, László Péter and Tapasztó, Levente (2019) Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers. JOURNAL OF PHYSICAL CHEMISTRY C, 123 (40). pp. 24855-24864. ISSN 1932-7447

Kun, Péter and Kukucska, Gergő and Dobrik, Gergely and Koltai, János and Kürti, Jenő and Biró, László Péter and Tapasztó, Levente and Nemes Incze, Péter (2019) Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene. NPJ 2D MATERIALS AND APPLICATIONS, 3 (1). ISSN 2397-7132

Pető, János and Dobrik, Gergely and Kukucska, Gergő and Vancsó, Péter and Koós, Antal A. and Koltai, János and Nemes-Incze, Péter and Tapasztó, Levente (2019) Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers. NPJ 2D MATERIALS AND APPLICATIONS, 3. pp. 1-6. ISSN 2397-7132

Rácz, Adél Sarolta and Zámbó, Dániel and Dobrik, Gergely and Lukács, István Endre and Zolnai, Zsolt and Deák, András and Battistig, Gábor and Menyhárd, Miklós (2019) Novel method for the production of SiC micro and nanopatterns. SURFACE AND COATINGS TECHNOLOGY, 372. pp. 427-433. ISSN 0257-8972

Vancsó, Péter and Popov, Zakhar I. and Pető, János and Ollár, Tamás and Dobrik, Gergely and Pap, József Sándor and Hwang, Chanyong and Sorokin, Pavel B. and Tapasztó, Levente (2019) Transition metal chalcogenide single layers as an active platform for single-atom catalysis. ACS ENERGY LETTERS, 4 (8). pp. 1947-1953. ISSN 2380-8195

Pető, János and Ollár, Tamás and Vancsó, Péter and Popov, Z. I. and Magda, Gábor Zsolt and Dobrik, Gergely and Tapasztó, Levente (2018) Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions. NATURE CHEMISTRY (10). pp. 1246-1251. ISSN 1755-4330

Tapasztó, Orsolya and Balko, Ján and Puchy, Victor and Kun, Péter and Dobrik, Gergely and Fogarassy, Zsolt and Horváth, Zsolt Endre and Balázsi, Katalin and Balázsi, Csaba and Tapasztó, Levente (2017) Highly wear-resistant and low-friction Si3N4 composites by addition of graphene nanoplatelets approaching the 2D limit. SCIENTIFIC REPORTS, 7 (1). pp. 1-8. ISSN 2045-2322

Koós, Antal Adolf and Vancsó, Péter and Magda, Gábor Zsolt and Osváth, Zoltán and Kertész, Krisztián Imre and Dobrik, Gergely and Tapasztó, Levente and Biró, László Péter (2016) STM study of the MoS2 flakes grown on graphite: A model system for atomically clean 2D heterostructure interfaces. Carbon, 105. pp. 408-415. ISSN 0008-6223

Koós, Antal Adolf and Vancsó, Péter and Magda, Gábor Z. and Osváth, Zoltán and Kertész, Krisztián and Dobrik, Gergely and Hwang, Chanyong and Tapasztó, Levente and Biró, László P. (2016) STM study of the MoS2 flakes grown on graphite: A model system for atomically clean 2D heterostructure interfaces. Carbon, 105. pp. 408-415. ISSN 0008-6223 (Submitted)

Magda, Gábor Zsolt and Pető, János and Dobrik, Gergely and Hwang, Chanyong and Biró, László Péter and Tapasztó, Levente (2015) Exfoliation of large-area transition metal chalcogenide single layers. SCIENTIFIC REPORTS, 5. p. 14714. ISSN 2045-2322

Neumann, Péter Lajos and Obreczán, V. I. and Dobrik, Gergely and Kertész, Krisztián Imre and Horváth, Enikő and Lukács, István Endre and Biró, László Péter and Horváth, Zsolt Endre (2014) Different sensing mechanisms in single wire and mat carbon nanotubes chemical sensors. APPLIED PHYSICS A - MATERIALS SCIENCE AND PROCESSING, 117. pp. 2107-2113. ISSN 0947-8396

Fogarassy, Zsolt and Rümmeli, Mark H. and Gorantla, Sandeep and Bachmatiuk, Alicja and Dobrik, Gergely and Kamarás, Katalin and Biró, László Péter and Havancsák, Károly and Lábár, János (2014) Dominantly epitaxial growth of graphene on Ni(111) substrate. APPLIED SURFACE SCIENCE, 314. pp. 490-499. ISSN 0169-4332

Pataki, Bernadeth and Tiusanen, Jyri and Dobrik, Gergely and Vértesy, Zofia and Horváth, Zsolt Endre (2014) Visualization of the conductive paths in injection moulded MWNT/polycarbonate nanocomposites by conductive AFM. COMPOSITES SCIENCE AND TECHNOLOGY, 90. pp. 102-109. ISSN 0266-3538

Fogarassy, Zsolt and Dobrik, Gergely and Varga, Lajos Károly and Biró, László Péter and Lábár, János (2013) Growth of Ni layers on single crystal sapphire substrates. THIN SOLID FILMS, 539. pp. 96-101. ISSN 0040-6090

Dobrik, Gergely and Tapasztó, Levente and Biró, László Péter (2013) Selective etching of armchair edges in graphite. Carbon, 56. pp. 332-338. ISSN 0008-6223

This list was generated on Wed Apr 24 14:07:15 2024 CEST.