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Items where Author is "Giannazzo, Filippo"

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Number of items: 14.

Article

Giannazzo, Filippo and Panasci, Salvatore Ethan and Schilirò, Emanuela and Koós, Antal and Pécz, Béla (2024) Integration of Graphene and MoS2 on Silicon Carbide: Materials Science Challenges and Novel Devices. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING : FUNCTIONAL MATERIALS FOR (OPTO)ELECTRONICS, SENSORS, DETECTORS, AND GREEN ENERGY, 174. No.-108220. ISSN 1369-8001 (print); 1873-4081 (online)

Panasci, Salvatore Ethan and Deretzis, Ioannis and Schilirò, Emanuela and La Magna, Antonino and Roccaforte, Fabrizio and Koós, Antal Adolf and Németh, Miklós and Pécz, Béla and Cannas, Marco and Agnello, Simonpietro and Giannazzo, Filippo (2024) Interface Properties of MoS2 van der Waals Heterojunctions with GaN. NANOMATERIALS, 14 (2). No-133. ISSN 2079-4991

Sfuncia, Gianfranco and Nicotra, Giuseppe and Giannazzo, Filippo and Pécz, Béla and Gueorguiev, Gueorgui Kostov and Kakanakova-Georgieva, Anelia (2023) 2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface. CRYSTENGCOMM. ISSN 1466-8033

Španková, Marianna and Chromik, Štefan and Dobročka, Edmund and Pribusová Slušná, Lenka and Talacko, Marcel and Maroš, Gregor and Pécz, Béla and Koós, Antal Adolf and Greco, Giuseppe and Panasci, Salvatore Ethan and Fiorenza, Patrick and Roccaforte, Fabrizio and Cordier, Yvon and Frayssinet, Eric and Giannazzo, Filippo (2023) Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition. NANOMATERIALS, 13 (21). No-2837. ISSN 2079-4991

Pécz, Béla and Németh, Miklós and Giannazzo, Filippo and Kakanakova-Georgieva, Anelia (2023) On the possibility of realizing a 2D structure of Si‐N bonds by MOCVD. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. ISSN 0370-1972

Giannazzo, Filippo and Panasci, Salvatore E. and Schilirò, Emanuela and Roccaforte, Fabrizio and Koós, Antal and Németh, Miklós and Pécz, Béla (2022) Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions. ADVANCED MATERIALS INTERFACES. pp. 1-10. ISSN 2196-7350

Giannazzo, Filippo and Panasci, Salvatore Ethan and Schiliro, Emanuela and Fiorenza, Patrick and Greco, Giuseppe and Koós, Antal Adolf and Pécz, Béla (2022) Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC. ADVANCED MATERIALS INTERFACES. ISSN 2196-7350

Panasci, Salvatore E. and Koós, Antal and Schilirò, Emanuela and Di Franco, Salvatore and Greco, Giuseppe and Fiorenza, Patrick and Roccaforte, Fabrizio and Agnello, Simonpietro and Cannas, Marco and Gelardi, Franco M. and Sulyok, Attila and Németh, Miklós and Pécz, Béla and Giannazzo, Filippo (2022) Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization. NANOMATERIALS, 12 (2). pp. 1-15. ISSN 2079-4991

Schilirò, Emanuela and Giannazzo, Filippo and Di Franco, Salvatore and Greco, Giuseppe and Fiorenza, Patrick and Roccaforte, Fabrizio and Prystawko, Paweł and Kruszewski, Piotr and Leszczynski, Mike and Cora, Ildikó and Pécz, Béla and Fogarassy, Zsolt and Lo Nigro, Raffaella (2021) Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. NANOMATERIALS, 11 (12). pp. 1-10. ISSN 2079-4991

Kakanakova-Georgieva, Anelia and Giannazzo, Filippo and Nicotra, Giuseppe and Cora, Ildikó and Gueorguiev, Gueorgui K. and Pécz, Béla (2021) Material proposal for 2D indium oxide. APPLIED SURFACE SCIENCE, 548. ISSN 0169-4332

Pécz, Béla and Nicotra, Giuseppe and Giannazzo, Filippo and Yakimova, Rositsa and Koós, Antal Adolf (2020) Indium Nitride at the 2D Limit. ADVANCED MATERIALS, in pre. ISSN 0935-9648

Kakanakova-Georgieva, Anelia and Ivanov, Ivan G. and Suwannaharn, Nattamon and Hsu, Chih-Wei and Cora, Ildikó and Pécz, Béla and Giannazzo, Filippo and Sangiovanni, Davide G. and Gueorguiev, Gueorgui K. (2020) MOCVD of AlN on epitaxial graphene at extreme temperatures. CRYSTENGCOMM. pp. 1-6. ISSN 1466-8033

Schiliro, Emanuela and Giannazzo, Filippo and Bongiorno, Corrado and Di Franco, Salvatore and Greco, Giuseppe and Cora, Ildikó and Pécz, Béla (2019) Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 97. pp. 35-39. ISSN 1369-8001

Greco, Giuseppe and Giannazzo, Filippo and Fiorenza, Patrick and Di Franco, Salvatore and Alberti, Alessandra and Cora, Ildikó and Pécz, Béla (2017) Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017. pp. 1-6. ISSN 1862-6300

This list was generated on Thu Mar 28 23:29:21 2024 CET.