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Fabrication of a-SiGe Structure by RF Sputtering for Solar Cell Purposes

Serényi, Miklós and Betko, J. and Nemcsics, Ákos and Nguyen Quoc, Khánh and Morvic, M. (2003) Fabrication of a-SiGe Structure by RF Sputtering for Solar Cell Purposes. PHYSICA STATUS SOLIDI C-CONFERENCES AND CRITICAL REVIEWS, 00 (3). pp. 857-861. ISSN 1610-1634

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Abstract

The deposition and electronic properties of a-SiGe and a-Si layers for thin-film solar cell applications are discussed. Technological parameters were developed for good layer quality of amorphous material. An inverse relation was discovered between the resistivity and the flow of hydrogen without annealing after deposition. Antimony was found to be a good doping material.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 27 May 2014 09:16
Last Modified: 05 Jun 2014 09:00
URI: http://real.mtak.hu/id/eprint/12897

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