Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevice

Horváth, Zsolt József and Serényi, Miklós and Ádám, Antalné and Szabó, I. and Badalján, Edvard and Rakovics, Vilmos (2003) Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevice. PHYSICA STATUS SOLIDI C-CONFERENCES AND CRITICAL REVIEWS, 00 (3). pp. 1066-1069. ISSN 1610-1634

[img] Text
Restricted to Registered users only

Download (44kB) | Request a copy


The structure, the preparation, the current-voltage and the capacitance-voltage characteristics (measured in the temperature range of 80-320 K) of Al/a-SiGe:H/c-Si m-i-p diodes are presented and discussed. The forward current-voltage characteristics of the diodes are exponential at low biases and quadratic at high biases. The latter feature is connected with the H content of the amorphous layer, and is probably due to the double-injection space-charge limited current mechanism. The anomalies of the capacitance-voltage characteristics are due to the contribution of deep levels present in the amorphous SiGe layer.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
Depositing User: MTMT SWORD
Date Deposited: 28 May 2014 12:08
Last Modified: 05 Jun 2014 09:05

Actions (login required)

Edit Item Edit Item