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Determination of the thickness distribution of a graphene layer grown on a 2" SiC wafer by means of Auger electron spectroscopy depth profiling

Kotysh, László and Gurbán, Sándor and Pécz, Béla and Menyhárd, Miklós and Yakimova, R. (2014) Determination of the thickness distribution of a graphene layer grown on a 2" SiC wafer by means of Auger electron spectroscopy depth profiling. APPLIED SURFACE SCIENCE, 316. pp. 301-307. ISSN 0169-4332

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Abstract

Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 inch 6H-SiC (0001) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the C made buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50m), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 02 Sep 2014 13:40
Last Modified: 02 Sep 2014 13:40
URI: http://real.mtak.hu/id/eprint/14406

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