Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

Tóvári, Endre and Csontos, Miklós and Kriváchy, Tamás and Fürjes, Péter and Csonka, Szabolcs (2014) Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems. APPLIED PHYSICS LETTERS, 105 (12). p. 123114. ISSN 0003-6951

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Abstract

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material platform for graphene based nanoelectromechanical applications.

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