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Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

Tóvári, Endre and Csontos, Miklós and Kriváchy, Tamás and Fürjes, Péter and Csonka, Szabolcs (2014) Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems. APPLIED PHYSICS LETTERS, 105 (12). p. 123114. ISSN 0003-6951

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Abstract

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material platform for graphene based nanoelectromechanical applications.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika
Depositing User: Dr Miklós Csontos
Date Deposited: 23 Sep 2014 09:56
Last Modified: 18 May 2016 09:36
URI: http://real.mtak.hu/id/eprint/16103

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