Baji, Zsófia and Pósa, László and Molnár, György and Szabó, Zoltán and Volom, Mátyás and Volk, János (2023) VO2 Layers with High Resistive Switching Ratio by Atomic Layer Deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING : FUNCTIONAL MATERIALS FOR (OPTO)ELECTRONICS, SENSORS, DETECTORS, AND GREEN ENERGY, 162. pp. 1-9. ISSN 1369-8001 (print); 1873-4081 (online)
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2023_Baji_ALD-VO2-resistive-switch_MSSP.pdf Restricted to Repository staff only Download (9MB) |
Official URL: https://doi.org/10.1016/j.mssp.2023.107483
| Item Type: | Article |
|---|---|
| Subjects: | Q Science / természettudomány > QD Chemistry / kémia > QD02 Physical chemistry / fizikai kémia |
| SWORD Depositor: | MTMT SWORD |
| Depositing User: | MTMT SWORD |
| Date Deposited: | 22 May 2023 07:15 |
| Last Modified: | 22 Sep 2023 12:45 |
| URI: | http://real.mtak.hu/id/eprint/165696 |
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