On the possibility of realizing a 2D structure of Si‐N bonds by MOCVD

Pécz, Béla and Németh, Miklós and Giannazzo, Filippo and Kakanakova-Georgieva, Anelia (2023) On the possibility of realizing a 2D structure of Si‐N bonds by MOCVD. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. ISSN 0370-1972

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Abstract

Two‐dimensional (2D) SiN honeycomb monolayer structures predicted theoretically have been the focus of interest in materials science for a long time, most recently for their semiconducting and ferromagnetic properties. Here, by investigating MOCVD processes and direct heat treatment of epitaxial graphene in ammonia flow, we report the possibility of realizing a periodic 2D structure via Si‐N bonds under epitaxial graphene on SiC (0001). The result is of interest because it is compatible with semiconductor material deposition technologies and future use in nanoscience and nanotechnology.

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