Coherent control of single spins in silicon carbide at room temperature

Widmann, M. and Lee, S-Y. and Rendler, T. and Son, N. T. and Fedder, H. and Gali, Ádám (2015) Coherent control of single spins in silicon carbide at room temperature. NATURE MATERIALS, 14 (2). pp. 164-168. ISSN 1476-1122

Preview

Text 1407.0180.pdf Available under License Creative Commons Attribution. Download (1MB) | Preview

Abstract

Spins in solids are cornerstone elements of quantum spintronics1. Leading contenders such as defects in diamond2–5, or individual phosphorous dopants in silicon6 have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems5: It has a large bandgap with deep defects7–9 and benefits from mature fabrication techniques10–12. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic- scale spintronics and quantum technology.

Actions (login required)

Edit Item