Texture change of TiN films due to anisotropic incorporation of oxygen

Biró, Domokos and Hasaneen, M. F. and Székely, Lajos and Menyhárd, Miklós and Gurbán, Sándor and Pekker, Péter and Dódony, István and Barna B., Péter (2014) Texture change of TiN films due to anisotropic incorporation of oxygen. VACUUM, 103. pp. 78-86. ISSN 0042-207X

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Results of comprehensive structural and microchemical analyses revealed the mechanisms responsible for changing the < 111 > to < 001 > competitive growth texture of TiN films when the level of oxygen doping was 20 at.%. It has been shown that the growth competition is related to the different way of segregation-incorporation of the oxygen species on the {001} and {111} crystal faces. Oxygen is preferentially segregated on the OM crystal face and is growing in the form of a 2D TiO2 surface layer on the growth surface, limiting the growth of < 111 > oriented crystals. On the {001} faces, however, the major part of condensing oxygen species is dissolved into the crystal lattice and only a part forms TiO2 aggregates. These aggregates have a 3D morphology which do not hinder the growth of < 001 > oriented crystals. Consequently, the < 001 > oriented crystals win the growth competition leading to a film structure constituted of V-shaped columns. (C) 2014 Elsevier Ltd. All rights reserved.

Item Type: Article
Uncontrolled Keywords: AGGLOMERATION; Two dimensional; Titanium nitride; Titanium dioxide; Textures; Semiconductor doping; Metallic films; FILM GROWTH; Dissolved oxygen; crystal structure; Anisotropy; Aggregates; Texture evolutions; Oriented crystals; Microchemical analysis; Growth surfaces; Growth competition; Film structure; Competitive growth; transmission electron microscopy; Titanium-nitride films; TEXTURE EVOLUTION; Oxygen Doping; Competitive growth of crystals; Anisotropic segregation of oxygen
Subjects: Q Science / természettudomány > QC Physics / fizika
Depositing User: MTMT SWORD
Date Deposited: 19 Jun 2015 11:32
Last Modified: 19 Jun 2015 11:32

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