Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

Babenko, Vitaliy and Murdock, Adrian T. and Koós, Antal Adolf and Britton, Jude and Crossley, Alison and Holdway, Philip and Moffat, Jonathan and Huang, Jian and Alexander-Webber, Jack A. and Nicholas, Robin J. and Grobert, Nicole (2015) Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum. Nature communications, 6. p. 7536. ISSN 2041-1723

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Abstract

Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

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