Gubicza, Jenő and Szépvölgyi, János and Mohai, I. and Ungár, Tamás (2001) X-ray line profile analysis of nanodisperse silicon nitride ceramics. In: 7th European Powder Diffraction Conference, 2000. május 23., Barcelona, Spain.
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Nanodisperse silicon nitride powders were produced by different methods of synthesis. The effect of the production routes on the grain-size distribution and the dislocation density in the powders were studied by high-resolution X-ray diffraction. The average grain-size and the dislocation density of the samples were determined by the recently developed modified Williamson-Hall and Warren-Averbach procedures from X-ray diffraction profiles. A new numerical method provided log-normal grain-size distributions from the size parameters derived from X-ray diffraction profiles. It was established that the powder produced by silicon nitridation and milling had lower average grain-size and wider size distribution than the sample crystallized from amorphous silicon nitride powder synthesized in plasma reactor. The grain-size distribution and the area-weighted average grain-size obtained by X-rays were in good agreement with those determined by TEM and from the specific surface area, respectively. The dislocation density was found to be between 1014 and 1015m-2.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||Q Science / természettudomány > QC Physics / fizika|
|Depositing User:||Erika Bilicsi|
|Date Deposited:||16 Oct 2012 06:26|
|Last Modified:||16 Oct 2012 06:26|
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