Ťapajna, Milan and Válik, Lukáš and Gucmann, Filip and Gregušová, Dagmar and Fröhlich, Karol and Tóth, Lajos and Pécz, Béla (2017) Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35 (1). in press. ISSN 1071-1023
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Official URL: http://dx.doi.org/10.1116/1.4972870
| Item Type: | Article |
|---|---|
| Subjects: | Q Science / természettudomány > QC Physics / fizika |
| SWORD Depositor: | MTMT SWORD |
| Depositing User: | MTMT SWORD |
| Date Deposited: | 06 Jan 2017 07:34 |
| Last Modified: | 06 Jan 2017 07:39 |
| URI: | http://real.mtak.hu/id/eprint/44671 |
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