Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

Frigeri, C. and Serényi, Miklós and Khánh, Nguyen Quoc and Csík, Attila and Nasi, L. and Erdélyi, Z. and Beke, Dezső and Boyen, H -G (2013) Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing. APPLIED SURFACE SCIENCE, 267. pp. 30-34. ISSN 0169-4332

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Abstract

The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.

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