Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Frigeri, C. and Serényi, Miklós and Csík, Attila and Erdélyi, Zoltán and Beke, Dezső and Nasi, L. (2008) Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments. Journal of Materials Science: Materials in Electronics, 19 (S1). pp. 289-293. ISSN 0957-4522

Text 1137170.pdf Restricted to Registered users only Download (405kB) | Request a copy

Abstract

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the asdeposited multilayer except for the less severe conditions here applied (150 Celsius, time\22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

Actions (login required)

Edit Item