From nano voids to blisters in hydrogenated amorphous silicon

Frigeri, C. and Nasi, L. and Serényi, Miklós and Khánh, Nguyen Quoc and Szekrényes, Zsolt and Kamarás, Katalin and Csik, Attila (2013) From nano voids to blisters in hydrogenated amorphous silicon. In: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING-2013: PHYSICS,CHEMISTRYAND APPLICATIONS OF NANOSTRUCTURES. World Scientific, Singapore, pp. 176-179. ISBN 978-981-4460-17-0

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AFM and FTIR spectroscopy were applied to study thè relationship between surface blisters and nanovoids in annealed hydrogenated a-Si. The influence of thè H bonding configuration on thè way thè nanovoids give rise to thè blisters is discussed. Annealing causes an increase of thè polymers density. As they reside on thè voids walls their density increase causes an increase of thè voids volume. The polymers may release H inside thè voids with creation of H2 gas, whose expansion, upon annealing, further contributes to thè volume increase of thè voids till thè formation of surface blisters.

Item Type: Book Section
Subjects: Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika
Depositing User: Andrea Bolgár
Date Deposited: 09 Jul 2013 08:33
Last Modified: 09 Jul 2013 08:33

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