Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Ťapajna, Milan and Stoklas, R. and Gregušová, Dagmar and Gucmann, Filip and Hušeková, K. and Tóth, Lajos and Pécz, Béla (2017) Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. APPLIED SURFACE SCIENCE, 426. pp. 656-661. ISSN 0169-4332

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III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm−2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm−2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface. © 2017 Elsevier B.V.

Item Type: Article
Additional Information: N1 Funding details: 2/0138/2014, VEGA, Vedecká Grantová Agentúra MŠVVaŠ SR a SAV N1 Funding text: This work was supported by Slovak projects APVV 15-0031, VEGA2/0138/2014 and project “CENTE II” (1/2, ITMS code 26240120019) funded by ERDF. L. Tóth and B. Pécz thank the financial support from OTKA projects No:118201 and 108869.
Uncontrolled Keywords: Aluminum alloys; Surface polarizations; Post deposition annealing; Oxide deposition; Micro-structural; Metal oxide semiconductor; Interface trapped charges; X ray photoelectron spectroscopy; Vapor deposition; TRANSISTORS; Oxide semiconductors; Oxide films; Organometallics; Organic Chemicals; MOS devices; METALS; Metallorganic chemical vapor deposition; Metallic Compounds; Heterojunctions; Gallium alloys; Dielectric devices; DEPOSITION; CHEMICAL PROPERTIES; chemical analysis; Surface donors; MOS-HEMT; interface states; AlGaN/GaN
Subjects: Q Science / természettudomány > QC Physics / fizika
T Technology / alkalmazott, műszaki tudományok > TK Electrical engineering. Electronics Nuclear engineering / elektrotechnika, elektronika, atomtechnika
Depositing User: MTMT SWORD
Date Deposited: 14 Aug 2017 15:03
Last Modified: 14 Aug 2017 15:03

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