REAL

The Si p partial density of states in SiNx (0<x<2,0)

Kojnok, J. and Gyarmati, E. and Nickel, H. and Szász, András (1993) The Si p partial density of states in SiNx (0<x<2,0). JOURNAL OF NON-CRYSTALLINE SOLIDS, 155. pp. 155-164. ISSN 0022-3093

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Abstract

Some properties of non-stoichiometric amorphous silicon nitride, SiNx (0 < x < 2.0), prepared by physical vapour deposition in which hydrogen was excluded from the process, were investigated by X-ray fluorescence spectroscopy. The SiKβ and SiKα emission lines were measured. A non-bonding p-type vacancy state on the top upper Si valence band is identified up to the composition x = 1.2. This state was not observed in other studies of hydrogenated SiNx: H systems. The N 2s state derived lower valence band was split from the upper valence band with 2 eV valence band gap. The observed non-linear dependence of the Si p-band on x is inconsistent with a two-phase (Si and Si3N4) linear superposition model of this semiconducting amorphous alloy. The random bonding model is consistent with this dependence.

Item Type: Article
Uncontrolled Keywords: Silicon nitride; X ray fluorescence spectroscopy; Valence band; Two phase linear superposition model; Random bonding model; Emission lines; X ray spectroscopy; Vapor deposition; Semiconducting silicon compounds; Mathematical models; HYDROGENATION; Energy gap; Electron energy levels; Electron emission; Composition effects; Band structure; Amorphous materials
Subjects: Q Science / természettudomány > QC Physics / fizika
Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 10 Sep 2013 12:18
Last Modified: 10 Sep 2013 12:18
URI: http://real.mtak.hu/id/eprint/6535

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