Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Sánta, Botond and Molnár, Dániel and Haiber, Patrick and Gubicza, Ágnes and Szilágyi, Edit and Zolnai, Zsolt and Halbritter, András and Csontos, Miklós (2020) Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions. BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 11. pp. 92-100. ISSN 2190-4286

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Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.

Item Type: Article
Subjects: Q Science / természettudomány > QD Chemistry / kémia > QD02 Physical chemistry / fizikai kémia
Depositing User: MTMT SWORD
Date Deposited: 27 Jan 2020 15:33
Last Modified: 27 Jan 2020 15:33

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