Refractive index of sputtered silicon oxynitride layers for antireflection coating

Serényi, Miklós and Rácz, Miklós and Lohner, Tivadar (2001) Refractive index of sputtered silicon oxynitride layers for antireflection coating. VACUUM, 61 (2-4). pp. 245-249. ISSN 0042-207X

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Abstract

Silicon nitride and silicon oxynitride dielectric layers were fabricated by reactive RF sputtering from an Si target in conventional equipment. Sputtering was done using a gas mixture of high-purity nitrogen and oxygen at a total pressure of 2}3 Pa. To investigate the sputtering process parameters silicon nitride was deposited on polished slices of Si. Multiple angle incidence ellipsometry was applied for the determination of the refractive index and thickness of the deposited layers. We found that the sputtered silicon oxynitride layers have excellent transparency in visible and near-infrared ranges and a wide refractive index range varying from 2.05 to 1.45. The refractive index of the layers decreases continuously with the increasing O 2 partial pressure that did not exceed the value of 0.01 Pa. Being a low-temperature process, reactive sputtering is well appropriate for the compound semiconductor devices. ( 2001 Elsevier Science Ltd. All rights reserved.

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