Thin TaC layer produced by ion mixing

Barna, Árpád and Kotysh, László and Pécz, Béla and Sulyok, Attila and Sáfrán, György and Tóth, Attila Lajos and Menyhárd, Miklós (2012) Thin TaC layer produced by ion mixing. SURFACE AND COATINGS TECHNOLOGY, 206 (19-20). pp. 3917-3922. ISSN 0257-8972

Text 1-s2.0-S0257897212002332-main.pdf Restricted to Repository staff only Download (860kB)

Abstract

Ion-beam mixing in C/Ta layered systems was investigated. C 8 nm/Ta 12 nm and C 20 nm/Ta 19 nm/C 20 nm layer systems were irradiated by Ga+ ions of energy in the range of 2-30 keV. In case of the 8 nm and 20 nm thick C cover layers applying 5-8 key and 20-30 key Ga+ ion energy, respectively resulted in strongly asymmetric ion mixing; the carbon was readily transported to the Ta layer, while the reverse process was much weaker. Because of the asymmetrical transport the C/TaC interface remained sharp independently from the applied fluence. The carbon transported to the Ta layer formed TaCx. The stoichiometry of the carbide produced varied along the depth. The TaCx layer contained implanted Ga, the concentration of which decreased with increasing depth. The thickness of the TaCx layer could be tailored by the ion fluence and energy making possible to produce coating layer of desired thickness. (c) 2012 Elsevier ay. All rights reserved.

Actions (login required)

Edit Item