MOCVD of AlN on epitaxial graphene at extreme temperatures

Kakanakova-Georgieva, Anelia and Ivanov, Ivan G. and Suwannaharn, Nattamon and Hsu, Chih-Wei and Cora, Ildikó and Pécz, Béla and Giannazzo, Filippo and Sangiovanni, Davide G. and Gueorguiev, Gueorgui K. (2020) MOCVD of AlN on epitaxial graphene at extreme temperatures. CRYSTENGCOMM. pp. 1-6. ISSN 1466-8033

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Abstract

The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial graphene at temperatures in excess of 1200 °C have been rationalized. The use of epitaxial graphene, in conjunction with high deposition temperatures, can deliver on the realization of nanometer thin AlN whose material quality is characterized by the appearance of luminescent centers with narrow spectral emission at room temperature. It has been elaborated, based on our previous comprehensive ab initio molecular dynamics simulations, that the impact of graphene on AlN growth consists in the way it promotes dissociation of the trimethylaluminum, (CH3)3Al, precursor with subsequent formation of Al adatoms during the initial stages of the deposition process. The high deposition temperatures ensure adequate surface diffusion of the Al adatoms which is an essential factor in material quality enhancement. The role of graphene in intervening with the dissociation of another precursor, trimethylgallium, (CH3)3Ga, has accordingly been speculated by presenting a case of propagation of ultrathin GaN of semiconductor quality. A lower deposition temperature of 1100 °C in this case has better preserved the structural integrity of epitaxial graphene. Breakage and decomposition of the graphene layers has been deduced in the case of AlN deposition at temperatures in excess of 1200 °C.

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