Material proposal for 2D indium oxide

Kakanakova-Georgieva, Anelia and Giannazzo, Filippo and Nicotra, Giuseppe and Cora, Ildikó and Gueorguiev, Gueorgui K. and Pécz, Béla (2021) Material proposal for 2D indium oxide. APPLIED SURFACE SCIENCE, 548. ISSN 0169-4332


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Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in “atop” positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.

Item Type: Article
Uncontrolled Keywords: Scanning Transmission Electron Microscopy; conductive atomic force microscopy; 2D oxides; Metal organic chemical vapor deposition;
Subjects: Q Science / természettudomány > QC Physics / fizika > QC05 Physical nature of matter / részecskefizika
Q Science / természettudomány > QD Chemistry / kémia > QD04 Organic chemistry / szerves kémia
Depositing User: MTMT SWORD
Date Deposited: 15 Feb 2021 14:36
Last Modified: 15 Feb 2021 14:36

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