Atomic layer deposition and characterization of Zn-doped Ga2O3 films

Baji, Zsófia and Cora, Ildikó and Horváth, Zsolt Endre and Agócs, Emil and Szabó, Zoltán (2021) Atomic layer deposition and characterization of Zn-doped Ga2O3 films. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A-VACUUM SURFACES AND FILMS, 39 (3). ISSN 0734-2101

Text AtomiclayerdepositionandcharacterisationofGa2O3films.pdf Restricted to Repository staff only Download (704kB)

Abstract

The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed.

Actions (login required)

Edit Item