Electron microscopy study on the influence of B-implantation on Ni induced lateral crystallization in amorphous Si

Vouroutzis, N. and Radnóczi, Gy. Z. and Dodony, E. and Battistig, G. and Stoemenos, J. and Pécz, B. (2016) Electron microscopy study on the influence of B-implantation on Ni induced lateral crystallization in amorphous Si. MATERIALS TODAY: PROCEEDINGS, 3 (3). pp. 825-831. ISSN 2214-7853

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Abstract

Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films.

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