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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Schilirò, Emanuela and Giannazzo, Filippo and Di Franco, Salvatore and Greco, Giuseppe and Fiorenza, Patrick and Roccaforte, Fabrizio and Prystawko, Paweł and Kruszewski, Piotr and Leszczynski, Mike and Cora, Ildikó and Pécz, Béla and Fogarassy, Zsolt and Lo Nigro, Raffaella (2021) Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. NANOMATERIALS, 11 (12). pp. 1-10. ISSN 2079-4991

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Item Type: Article
Subjects: Q Science / természettudomány > QD Chemistry / kémia > QD02 Physical chemistry / fizikai kémia
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 07 Dec 2021 15:36
Last Modified: 07 Dec 2021 15:36
URI: http://real.mtak.hu/id/eprint/134292

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