Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

Levichev, S. and Chahboun, A. and Basa, Péter and Rolo, A. G. and Barradas, N. P. and Horváth, Zsolt József (2008) Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. MICROELECTRONIC ENGINEERING, 85 (12). pp. 2374-2377. ISSN 0167-9317

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Abstract

Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current– voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/ SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured. 2008 Elsevier B.V. All rights reserved.

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