Epitaxial relations, crystalline structure and defects in the double Si (111)/hR6 CaSi/Si (111) heterostructures

Galkin, N. G. and Dotsenko, S. A. and Galkin, K. N. and Dózsa, László and Cora, Ildikó and Pécz, Béla (2016) Epitaxial relations, crystalline structure and defects in the double Si (111)/hR6 CaSi/Si (111) heterostructures. JAPANESE JOURNAL OF APPLIED PHYSICS CONFERENCE PROCEEDINGS, 5. No. 011403. ISSN 2758-2450

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Abstract

The morphology and crystalline structure of Si(111)/CaSi2/Si(111) double heterostructures (DHS) formed by the Ca reactive deposition epitaxy on the Si(111)7x7 surface and Si overgrowth at 500 oC have been studied by atomic force microscopy and transmission electron microscopy. It was established that stressed CaSi2 layers with stacking faults in (001)CaSi2 plane and {111}-twinned epitaxial or polycrystalline Si layers were grown. Epitaxial Si layers while had orientation parallel to the Si(111) substrate surface. CaSi2[100]||Si[1-10] and CaSi2(001)||Si(111) epitaxial relations were conserved for all grown DHS and they did not depend from the silicon growth mode: molecular beam epitaxy (MBE) or solid phase epitaxy (SPE). The CaSi2 layer in (001)CaSi2 plane has a hR6 modification and parameters: a=0.393±0.002 nm; c=3.09±0.18 nm at SPE Si growth mode. But some another parameters: a=0.382±0.002 nm; c=3.09 ±0.18 nm were observed at MBE Si growth mode. The compression in c parameter on near 1.07-1.14% as compared with c-value (3.06 nm) for tabular CaSi2 data is established fact for both HDS. The observed differences in a parameter +1.85% (at SPE mode) and -1.08% (at MBE mode) is not clear now, and demands additional experiments. Some assumptions about mechanisms of occurrence and distribution of compressions and stretching in the CaSi2 lattice were made.

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