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Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films

Lazarenko, P. and Kovalyuk, V. and An, P. and Kozyukhin, S. and Takáts, Viktor (2022) Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films. ACTA MATERIALIA, 234. ISSN 1359-6454

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Additional Information: National Research University of Electronic Technology, Zelenograd, 124498, Russian Federation Moscow State Pedagogical University, Moscow, 119992, Russian Federation Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, Moscow, 119991, Russian Federation National Research Tomsk State University, Tomsk, 634050, Russian Federation Institute for Nuclear Research, Hungarian Academy of Sciences, Debrecen, 4026, Hungary Ryazan State Radio Engineering University, Ryazan, 390005, Russian Federation National Research Center "Kurchatov Institute"-ITEP, Moscow, 117218, Russian Federation National Research University Higher School of Economics, Moscow, 101000, Russian Federation NTI Center for Quantum Communications, National University of Science and Technology MISiS, Leninsky prospekt 4, Moscow, 119049, Russian Federation Russian Quantum Center, Moscow, Skolkovo, 143025, Russian Federation Export Date: 4 January 2023 Correspondence Address: Lazarenko, P.; National Research University of Electronic TechnologyRussian Federation; email: lpi@org.miet.ru
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 16 Mar 2023 13:04
Last Modified: 16 Mar 2023 13:04
URI: http://real.mtak.hu/id/eprint/162258

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