Pfender, M. and Aslam, N. and Simon, P. and Antonov, D. and Thiering, Gergő and Gali, Ádám (2017) Protecting a Diamond Quantum Memory by Charge State Control. NANO LETTERS, 17 (10). pp. 5931-5937. ISSN 1530-6984
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Abstract
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and VSi-centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.
Item Type: | Article |
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Subjects: | Q Science / természettudomány > Q1 Science (General) / természettudomány általában |
SWORD Depositor: | MTMT SWORD |
Depositing User: | MTMT SWORD |
Date Deposited: | 25 May 2023 09:29 |
Last Modified: | 25 May 2023 09:29 |
URI: | http://real.mtak.hu/id/eprint/166058 |
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