In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process

Chou, Ta-Shun and Bin Anooz, Saud and Grüneberg, Raimund and Rehm, Jana and Akhtar, Arub and Mukherjee, Deshabrato and Petrik, Péter and Popp, Andreas (2024) In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process. APPLIED SURFACE SCIENCE, 652. No-159370. ISSN 0169-4332

Preview

Text 1-s2.0-S0169433224000849-main.pdf Available under License Creative Commons Attribution. Download (3MB) | Preview

Abstract

Metalorganic vapor-phase epitaxy of β-Ga2O3/c-plane Al2O3 heterostructures was monitored in-situ by spectral reflectance in different wavelengths. The reflectance spectrum was analysed as a function of the growth time and the incident wavelength to estimate the growth rate and the refractive index at the growth temperatures. The obtained values are validated by ex-situ methods such as secondary ion mass spectrum measurement and spec- troscopic ellipsometry. A theoretical simulation of the reflectance spectrum was carried out by combining a transfer matrix method with a multilayer model, and a good agreement with the experimental results is presented.

Actions (login required)

Edit Item