Integration of Graphene and MoS2 on Silicon Carbide: Materials Science Challenges and Novel Devices

Giannazzo, Filippo and Panasci, Salvatore Ethan and Schilirò, Emanuela and Koós, Antal and Pécz, Béla (2024) Integration of Graphene and MoS2 on Silicon Carbide: Materials Science Challenges and Novel Devices. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING : FUNCTIONAL MATERIALS FOR (OPTO)ELECTRONICS, SENSORS, DETECTORS, AND GREEN ENERGY, 174. No.-108220. ISSN 1369-8001 (print); 1873-4081 (online)

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Abstract

Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is currently explored. The integration of two dimensional (2D) materials, such as graphene and molybdenum disulfide (MoS2) provides silicon carbide (SiC) with additional functionalities, allowing to expand its range of applications. This article reviews the state-of-the art methods for scalable growth of graphene and MoS2 on SiC, specifically on the hexagonal polytypes. Some open research directions in materials integration have been also discussed, like the use of epitaxial graphene (Epi-Gr) as interlayer for van der Waals (vdW) epitaxy of GaN or Ga2O3 on SiC substrates, and the growth of 2D forms of GaN materials by confined epitaxy at Epi-Gr/SiC interface. Finally, an overview of recently proposed electronics/optoelectronics applications of these material systems, specifically for high frequency electronics, quantum metrology, THz and UV detectors, is provided. This work can be a useful guide for silicon carbide community on these open research directions.

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