Dumas, P. and Gustavo, F. and Opprecht, M. and Freychet, G. and Gergaud, P. and Kerdilès, S. and Guillemin, S. and Lábár, János and Pécz, Béla and Lefloch, F. and Nemouchi, F. (2024) Enhancing superconductivity in CoSi2 films with laser annealing. JOURNAL OF APPLIED PHYSICS, 136 (10). No. 105103. ISSN 0021-8979
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2024_JAP_136_105103_1_5.0218950_CoSi2_LA.pdf - Published Version Available under License Creative Commons Attribution. Download (2MB) | Preview |
Abstract
Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lattice parameter, and residual resisitivity are consistent with the formation of the defective CsCl structure. The CoSi2 phase was found after prolonging the thermal treatment with additional pulses or rapid thermal annealing. Because CoSi is skipped in the phase sequence, CoSi2 layers are more uniform in thickness, have an increased superconductivity and a reduced formation temperature. This approach is compatible with the SALICIDE process and can be used to form smooth contacts in superconducting or regular transistors.
Item Type: | Article |
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Subjects: | Q Science / természettudomány > QC Physics / fizika |
SWORD Depositor: | MTMT SWORD |
Depositing User: | MTMT SWORD |
Date Deposited: | 10 Sep 2024 09:45 |
Last Modified: | 10 Sep 2024 09:45 |
URI: | https://real.mtak.hu/id/eprint/204591 |
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