Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films

Panasci, Salvatore Ethan and Schilirò, Emanuela and Cannas, Marco and Agnello, Simonpietro and Koós, Antal Adolf and Nemeth, Miklos and Pécz, Béla and Roccaforte, Fabrizio and Giannazzo, Filippo (2024) Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films. In: Solid State Phenomena. Solid State Phenomena (362). TRANS TECH PUBLICATIONS LTD, Bäch, pp. 7-12.

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Abstract

In this paper, we report on the growth of highly uniform MoS2 films, mostly consisting of monolayers, on SiC surfaces with different doping levels (n- SiC epitaxy, ~1016 cm-3, and n+ SiC substrate, ~1019 cm-3) by sulfurization of a pre-deposited ultra-thin MoOx films. MoS2 layers are lowly strained (~0.12% tensile strain) and highly p-type doped (<Nh>≈4×1019 cm−3), due to MoO3 residues still present after the sulfurization process. Nanoscale resolution I-V analyses by conductive atomic force microscopy (C-AFM) show a strongly rectifying behavior for MoS2 junction with n- SiC, whereas the p+ MoS2/n+ SiC junction exhibits an enhanced reverse current and a negative differential behavior under forward bias. This latter observation, indicating the occurrence of band-to-band-tunneling from the occupied states of n+ SiC conduction band to the empty states of p+ MoS2 valence band, is a confirmation of the very sharp hetero-interface between the two materials. These results pave the way to the fabrication of ultra-fast switching Esaki diodes on 4H-SiC.

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