Photo-Modulated Reflectance for Monitoring of the Annealing of Implanted Si Samples

Ullrich, D. and Szivós, J. and Dénes, B. and Deli, Z. and Bozóki, Z. and Lenk, Sándor and Zolnai, Z. and Nádudvari, G. and Balogh, L. (2025) Photo-Modulated Reflectance for Monitoring of the Annealing of Implanted Si Samples. In: 22nd International Workshop on Junction Technology, IWJT 2025. The Japan Society of Applied Physics, Tokyo, pp. 26-28. ISBN 9784863488137

Text C18_Ullrich_etal_2025_IWJT2025.pdf Restricted to Registered users only Download (402kB) | Request a copy

Abstract

Photo-modulated reflectance (PMR) is an optical technique that measures variations in the reflectivity of a material induced by modulated light excitation. PMR is a powerful method for analyzing the effects of ion implantation in silicon (Si) wafers, in particular after ion implantation but before thermal annealing. PMR is highly sensitive to implantation-induced crystal damage, which is primarily influenced by implantation parameters such as ion dose, energy, tilt-, twist angle, and ion beam current [1]. Ion implantation introduces defects that reduce the electrical conductivity of the exposed region of the wafer. To restore and precisely control conductivity, thermal annealing is used to repair the crystal structure and activate the implanted dopant ions. Since the annealing parameters control the extent of damage recovery, they are also in close connection with the PMR response [2]. © 2025 JSAP.

Actions (login required)

Edit Item