Controlled nucleation of metal-sulfide layers via surface functionalization with sulfur species: Enhanced initial growth of GaSx thin films

Baji, Zsófia and Kovács, Zoltán and Szabó, Zoltán and Hakkel, Orsolya and Sulyok, Attila and Fogarassy, Zsolt and Bérces, Zsófia and Volk, János (2026) Controlled nucleation of metal-sulfide layers via surface functionalization with sulfur species: Enhanced initial growth of GaSx thin films. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A-VACUUM SURFACES AND FILMS, 44 (3). No. 032402. ISSN 0734-2101

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Abstract

The initial stages of the atomic layer deposition (ALD) of metal sulfide thin films are hindered by delayed nucleation and poor film continuity. The present work explores the nucleation of gallium sulfide (GaSₓ) films using hexakis(dimethylamino)digallium and H₂S as precursors. Smooth amorphous GaSₓ layers were deposited, with their composition confirmed by XPS and their structure examined by TEM. Post-deposition annealing in H₂S was attempted to induce crystallinity. To address the nucleation barrier, a novel surface functionalization strategy was developed: replacing surface hydroxyl groups with sulfur containing species prior to deposition. Different functionalisation treatments were tested, which significantly enhanced nucleation, as demonstrated by accelerated initial growth and improved film uniformity even at low cycle numbers. These results establish chemically specific surface functionalization as an effective strategy to promote a controlled nucleation of sulfide thin films.

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