Anaya, J. and Rossi, S. and Alomari, M. and Kohn, E. and Toth, L. and Pécz, Béla (2015) Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires. APPLIED PHYSICS LETTERS, 106 (22). p. 223101. ISSN 0003-6951
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Abstract
The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers. (C) 2015 AIP Publishing LLC.
Item Type: | Article |
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Subjects: | Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika |
SWORD Depositor: | MTMT SWORD |
Depositing User: | MTMT SWORD |
Date Deposited: | 10 Sep 2015 04:02 |
Last Modified: | 10 Sep 2015 04:02 |
URI: | http://real.mtak.hu/id/eprint/26203 |
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