Gubicza, Jenő and Szépvölgyi, János and Mohai, Ilona and Zsoldos, L. and Ungár, Tamás (2000) Particle size distribution and dislocation density determined by high resolution X-ray diffraction in nanocrystalline silicon nitride powders. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCURE AND PROCESSING, 280 (2). pp. 263-269. ISSN 0921-5093
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Abstract
Two silicon nitride powders were investigated by high resolution X-ray diffraction. The first sample was crystallized from the powder prepared by the vapour phase reaction of silicon tetrachloride and ammonia while the second was a commercial powder produced by the direct nitridation of silicon. Their particle size and dislocation density were obtained by the recently developed modified Williamson-Hall and Warren-Averbach procedures from X-ray diffraction profiles. Assuming that the particle size distribution is log-normal the size distribution function was calculated from the size parameters derived from X-ray diffraction profiles. The size distributions determined from TEM micrographs were in good correlation with the X-ray results. The area-weighted average particle size calculated from nitrogen adsorption isotherms was in good agreement with that obtained from X-rays. The powder produced by silicon nitridation has a wider size distribution with a smaller average size than the powder prepared by vapour phase reaction. The dislocation densities were found to be between about 10(14) and 10(15) m(-2).
Item Type: | Article |
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Subjects: | Q Science / természettudomány > QC Physics / fizika Q Science / természettudomány > QD Chemistry / kémia |
Depositing User: | Erika Bilicsi |
Date Deposited: | 16 Oct 2012 07:55 |
Last Modified: | 16 Oct 2012 07:57 |
URI: | http://real.mtak.hu/id/eprint/3132 |
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