Early stages of growth and crystal structure evolution of boron nitride thin films

Henry, Anne and Chubarov, Mihail and Czigány, Zsolt and Garbrecht, Magnus and Högberg, H. (2016) Early stages of growth and crystal structure evolution of boron nitride thin films. JAPANESE JOURNAL OF APPLIED PHYSICS, 55 (5S). pp. 1-5. ISSN 0021-4922

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Abstract

A study of the nucleation and crystal structure evolution at the early stages of the growth of sp 2 -BN thin films on 6H-SiC and α-Al 2 O 3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H 2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On α-Al 2 O 3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy.

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