Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices

Ghegin, E. and Nemouchi, F. and Perrin, C. and Hoummada, K. and Lábár, János (2016) Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices. In: 2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, Honolulu, pp. 214-215. ISBN 978-1-5090-0726-4

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Item Type:	Book Section
Uncontrolled Keywords:	X-ray scattering; surface morphology; NICKEL; Indium phosphide; III-V semiconductor materials; CONTEXT; temperature 340 C; silicon photonics; integrable Ni-based contacts; innovative contacts; heterogeneous photonics devices; Ni-based metallizations; NI; INP; InGaAs; III-V materials; III-V devices; CMOS very large scale integration; CMOS VLSI; integrated circuit metallisation; indium compounds; GALLIUM ARSENIDE; Electrical contacts; VLSI; III-V semiconductors; CMOS integrated circuits
Subjects:	Q Science / természettudomány > QD Chemistry / kémia > QD02 Physical chemistry / fizikai kémia
SWORD Depositor:	MTMT SWORD
Depositing User:	MTMT SWORD
Date Deposited:	05 Dec 2016 09:12
Last Modified:	05 Dec 2016 09:12
URI:	http://real.mtak.hu/id/eprint/42780

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