Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

Gubicza, Jenő and Nauyoks, S. and Balogh, Levente and Lábár, János and Zerda, T. W. and Ungár, Tamás (2007) Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC. Journal of Materials Research, 22 (05). pp. 1314-1321. ISSN 0884-2914 (print), 2044-5326 (online)

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Abstract

Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800 degrees C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800 degrees C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth during sintering is accompanied by a decrease in the population of planar faults and an increase in the density of dislocations. A critical crystallite size above which dislocations are more abundant than planar defects is suggested.

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