Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

Pécz, Béla and Tóth, Lajos and Barna, Árpád and Tsiakatouras, George and Ajagunna, Adebowale Olufunso and Kovács, András and Georgakilas, Alexandros (2013) Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer. Diamond and Related Materials, 34. pp. 9-12. ISSN 0925-9635

Text Diamond_Structural GaN_34_9-12.pdf - Published Version Restricted to Registered users only Download (901kB) | Request a copy

Abstract

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer.

Actions (login required)

Edit Item